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VISHAY
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Transistor Output
Features
* Surface Mountable * Industry Standard SOIC-8 Footprint * Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes * Isolation Test Voltage, 3000 VRMS * Very High Common Mode Transient Immunity: 15000 V/ s at V CM = 1500 V Guaranteed (SFH6343) * High Speed: 1.0 Mb/s * TTL Compatible * Guaranteed AC and DC Performance Temperature: 0 C to 70 C * Open Collector Output * Pin Compatible with Agilent(HP) Optocouplers - SFH6315T-HCPL0500 - SFH6316T-HCPL0501 - SFH6343T-HCPL0453
NC 1 A2 C3 NC 4
SFH6315/6
8 VCC 7 BVB 6C 5E
SFH6343
NC 1 A2 C3 NC 4
i179069
8 VCC 7 NC 6C 5E
Agency Approvals
* UL - File No. E52744 System Code Y * CSA 93751 * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
photo detector and a high speed transistor. The photo detector is junction isolated from the transistor to reduce miller capacitance effects. The open collector output function allows circuit designers to adjust the load conditions when interfacing with different logic systems such as TTL, CMOS, etc. Because the SFH6343T has a Faraday shield on the detector chip, it can also reject and minimize high input to output common mode transient voltages. There is no base connection, further reducing the potential electrical noise entering the package. The SFH6315T/ SFH6316T/ SFH6343T are packaged in industry standard SOIC-8 packages and are suitable for surface mounting.
Applications
Line Receivers Logic Ground Isolation Analog Signal Ground Isolation Replace Pulse Transformers
Order Information
Part SFH6315T SFH6316T SFH6343T Remarks CTR > 5.0 %, SOIC-8 CTR > 15 %, SOIC-8 CTR > 19 %, SOIC-8
For additional order information see Option Section
Description
The SFH6315T/ SFH6316T/ SFH6343T, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated
Note that product is available only on tape and reel.
Document Number 83677 Rev. 1.3, 20-Nov-03
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SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors Absolute Maximum Ratings
VISHAY
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage DC forward current Surge forward current Power dissipation tp 1.0 s, 300 pulses/s Tamb 70 C Test condition Symbol VR IF IFSM Pdiss Value 3.0 25 1.0 45 Unit V mA A mW
Output
Parameter Supply voltage Output voltage Output current Power dissipation Tamb 70 C Test condition Symbol VS VO IO Pdiss Value - 0.5 to 30 - 0.5 to 25 8.0 100 Unit V V mA mW
Coupler
Parameter Isolation test voltage between emitter and detector (refer to climate DIN 40046, part 2, Nov.74) Pollution degree (DIN VDE 0110) Creepage Clearance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C, RISOL (Note 2) VIO = 500 V, Tamb = 100 C, RISOL (Note 2) Storage temperature range Ambient temperature range Junction temperature Soldering temperature t = 10 s max., Dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Test condition Symbol VISO Value 3000 Unit VRMS
2 4.0 4.0 175 1012 1011 -55 to +150 -55 to +100 100 260 C C C C mm mm
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Document Number 83677 Rev. 1.3, 20-Nov-03
VISHAY
Electrical Characteristics
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Over recommend temperature (Tamb = 0 C to 70 C) unless otherwise specified. See note 6. All typical values at Tamb = 25 . Parameter Input forward voltage Input reverse current Input capacitance Temperature coefficient of forward voltage Test condition IF = 16 mA VR = 3.0 V f = 1.0 MHz, VF = 0 V IF = 16 mA Symbol VF VF IR CIN VF/Tamb Min Typ. 1.6 1.6 0.5 75 -1.7 Max 1.8 1.9 10 Unit V V A pF mV/C
Output
Parameter Logic low supply current Logic high supply current Logic low output voltage Test condition IF = 16 mA, VO = Open, VCC = 15 V IF = 0 mA, VO = Open, VCC = 15 V Part Symbol ICCL ICCH ICCH IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA IF = 16 mA, VCC= 4.5 V, IO = 0.8 mA, IF = 16 mA, VCC = 4.5 V, IO = 3.0 mA IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA, Logic high output current IF = 0 mA, VO = VCC = 5.5 V IF = 0 mA, VO = VCC = 15 V SFH6315T SFH6315T SFH6316T SFH6343T VOL VOL VOL VOL IOH IOH IOH Min Typ. 200 0.001 0.001 0.15 0.15 0.15 0.15 0.003 0.01 1.0 2.0 0.4 0.5 0.4 0.5 0.5 1.0 50 Max Unit A A A V V V V A A A
Coupler
Parameter Capacitance (input-output).See note 6. Test condition f = 1.0 MHz Symbol CI-O Min Typ. 0.4 Max Unit pF
Current Transfer Ratio
Parameter
See notes 1 and 6
Test condition
Part SFH6315T SFH6315T SFH6316T SFH6343T
Symbol CTR CTR CTR CTR
Min 7 5 19 15
Typ. 16 17 35 36
Max 50
Unit % %
Current transfer ratio VO = 0.4 V, IF = 16 mA, VCC = 4.5 V VO = 0.5 V, IF = 16 mA, VCC = 4.5 V VO = 0.4 V, IF = 16 mA, VCC = 4.5 V VO = 0.5 V, IF = 16 mA, VCC = 4.5 V
50
% %
Document Number 83677 Rev. 1.3, 20-Nov-03
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SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
VISHAY
10% Duty Cycle 1/f<100 s 1 Pulse Generator ZO = 50 tr = 5 ns IF 2 8 7 RL 3 IF = Monitor Rm
isfh6315t_01
+5 V
IF 0 VO 5V
6 5
0.1 F
VO C L=15pF
1.5 V tPHL tPLH
1.5 V VOL
4
Figure 1. Test circuit for switching times
Switching Characteristics
Over recommended temperature (Tamb = 0C), VCC = 5.0 V, IF = 16 mA unless otherwise specified. All typical values, Tamb = 25 C Parameter Propagation delay time to logic low at output
See fig. 1and notes 4 and 5
Test condition RL = 4.1 K
Part SFH6315T SFH6315T
Symbol tPHL tPHL tPHL tPHL tPLH tPLH tPLH tPLH
Min
Typ. 0.5 0.5 0.25 0.25 0.5 0.5 0.5 0.5
Max 1.5 2.0 0.8 1.0 1.5 2.0 0.8 1.0
Unit s s s s s s s s
RL = 1.9 K Propagation delay time to logic high at output
See fig. 1and notes 4 and 5
SFH6316T SFH6343T SFH6315T SFH6315T
RL = 4.1 K
RL=1.9 K RL = 1.9 K
SFH6316T SFH6343T
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Document Number 83677 Rev. 1.3, 20-Nov-03
VISHAY
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
Common Mode Transient Immunity
Parameter Common mode transient immunity at logic high level output
See fig. 2 and notes 3,4 and 5
Test condition RL = 4.1 K, IF = 0 mA, VCM = 10 VP-P
Part SFH6315T
Symbol |CMH|
Min
Typ. 1.0
Max
Unit KV/s
RL = 1.9 K, IF = 0 mA, VCM = 1500 VP-P Common mode transient immunity at logic low level output
See fig. 2 and notes 3,4 and 5
SFH6316T SFH6343T
|CMH| |CMH| |CML| 15
1.0 30 1.0
KV/s KV/s KV/s
RL = 4.1 K, IF = 16 mA, VCM = 10 VP-P RL = 1.9 K , IF = 16 mA, VCM = 10 VP-P RL = 1.9 K , IF = 16 mA, VCM = 1500 VP-P
SFH6315T
SFH6316T SFH6343T
|CML| |CML| 15
1.0 30
KV/s KV/s
1. Current transfer ratio in percent equals the ratio of output collector current (IO) to the forward LED input current (IF) times 100 2. Device considered a two-terminal device: pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together. 3. Common mode transient immunity in a Logic High level is the maximum tolerable (positive) dVCM/dt on the leading edge of the common mode pulse (VCM) to assure that the output will remain in a Logic High state (i.e., VO > 2.0 V). Common mode transient immunity in a Logic Low level the maximum tolerable (negative) dVCM/dt on the trailing edge of the common mode pulse signal (VCM to assure that the output will remain in Logic Low state, i.e., VO > 0.8 V). 4. The 1.9 k load represents 1 TTL unit load of 1.6 mA and the 5.6 k pull-up resistor. 5. The 4.1 k load represents 1 LSTTL unit load of 0.36 mA and the 6.1 k pull-up resistor. 6. A 0.1 f bypass capacitor connected between pins 5 and 8 is recommended.
1 IF 2 3 4 VCC +
isfh6315t_02
8 7 6 0.1 F 5
+5 V
VCM 0 V 10%
90% tr
90% 10% tf
RL VO
A B
VO Switch at A: IF = 0 mA
5V
VCM
-
VO
Pulse Generator
Switch at B: IF = 16 mA
VOL
Figure 2. Test circuit for transient immunity and typical waveforms
Document Number 83677 Rev. 1.3, 20-Nov-03
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SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
20
IF - LED Current in mA Output Current, Io (mA)
VISHAY
8 7 6 5 4 3 2 1 0
@ VO = 0.4 V, VCC = 5.0 IF = 20mA IF = 16mA IF = 10mA IF = 2mA
15 10 5 0 1.3 1.4 1.5 1.6 1.7 VF - LED forward Voltage 75 C 25 C 0 C
IF = 1mA
isfh6315t_03
-60
isfh6315t_07
-40
-20
0 20 40 60 Temperature, Ta (C)
80
100
Figure 3. LED Forward Current vs.Forward Voltage
Figure 6. Output Current vs. Temperature
30
tp - Propagation Delay Time - ns IF LED Current in ma
900 800 700 600 500 400 300 200 100 0 -60 -40 -20 0 20 40 60 Temperature, Ta (C) 80 100 TpHL @ 1.5 V TpHL @ 3 V TpLH @ 1.5 V SFH6316T and SFH6343T @ VCC = 5.0 V TpLH @ 3 V IF = 16 mA, RL = 1.9 k
20
10
0 0 20 40 60 80 100 Ambient Temperature in C
isfh6315t_04
isfh6315t_08
Figure 4. Permissible Forward LED Current vs. Temperature
Figure 7. Propagation Delay vs. Temperature-SFH6316T and SFH6343T
120
tp - Propagation Delay Time - ns Total Power in mW
1400 Detector 1200 1000 800 600 400 200 0 -60 -40 -20 TpHL TpLH SFH6315T @ VCC = 5.0 V, IF = 16 mA, RL = 4.1 k
100 80 60 40
Emitter 20 0 0 20 40 60 80 Ambient Temperature in C 100
0 20 40 60 Temperature, Ta (C)
80
100
isfh6315t_05
isfh6315t_09
Figure 5. Permissible Power Dissipation vs. Temperature
Figure 8. Propagation Delay vs. Temperature-SFH6315T
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Document Number 83677 Rev. 1.3, 20-Nov-03
VISHAY
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
100
IOH - Collector Current, IC (nA) iF/iO / Small Signal Current Transfer Ratio
0.6 0.5 0.4 0.3 0.2 0.1 0 -60 -40 -20 0 20 40 60 Temperature, TA (C) 80 100
isfh6315t_11
(VCC = 5.0 V, RL = 100 )
10 1 0.1 0.01 VCC = VO = 15 V VCC = VO = 5 V
0.001
0
5
10 IF / mA
15
20
25
isfh6315t_10
Figure 9. Logic High Output Current vs.Temperature
Figure 10. Small Signal Current Transfer Ratio vs. Quiescent Input Current
Package Dimensions in Inches (mm)
.120 .005 (3.05 .13) .240 (6.10) Pin One ID .192 .005 (4.88 .13) .004 (.10) .008 (.20)
R .010(.25)
.154 .005 C L(3.91 .13)
.050 (1.27)
.014 (.36) .036 (.91)
.016 (.41)
.266 (6.76) .356 (9.04)
.045 (1.14)
.015 .002 (.38 .05) .008 (.20)
40
7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) Lead Coplanarity .0015 (.04) max.
5 max. R.010 (.25) max.
ISO Method A
i178003
.050 (1.27) typ. .021 (.53)
.020 .004 (.51 .10) 2 plcs.
Document Number 83677 Rev. 1.3, 20-Nov-03
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SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83677 Rev. 1.3, 20-Nov-03

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